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    • Transient anode voltage modeling of IGBT and its base doping profile investigation 

      Das, Avijit; Md Ziaur Rahman, Khan (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12)
      In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through ...